Mid-Infrared Integrated Silicon–Germanium Ring Resonator With High Q-Factor

Di: Stella

We report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236 000

ABSTRACT We report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. Here, based on the commonly used 340 nm silicon-on-insulator (SOI) platform, we experimentally demonstrate high-efficiency and broadband wavelength conversion using the FWM effect in a

Infrared imaging with nonlinear silicon resonator governed by high-Q ...

We demonstrate a ring resonator with high Q-factor in the mid-infrared in a silicongermanium on silicon chip-based platform. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the Highly sensitive trace-gas detection is possible in the mid-infrared range with transparent MIR 3 15 μm microresonators. Here, the authors directly measure the necessary ultra-high The mid-infrared (MIR) wavelength range (between 3 and 13 µm) has a large potential for sensing applications, as many molecules have strong fundamental absorption lines in this range [1].

Active mid-infrared ring resonators

Silicon-Germanium Integrated Ring Resonator with High Q-factor in the Mid-Infrared Marko Perestjuk1,2,4, Rémi Armand1, Alberto Della Torre1, Milan Sinobad1, Arnan Silicon-Germanium Integrated Ring Resonator with High Q-factor in the Mid-Infrared Marko Perestjuk, a high Q ring Rémi Armand, Alberto Della Torre, Milan Sinobad, Arnan Mitchell, Andreas Boes, Midinfrared spectroscopy is a universal way to identify chemical and biological substances. Indeed, when interacting with a light beam, most molecules are responsible for

We demonstrate high-quality (Q) factor grating-coupled ring resonators in a silicon-on-sapphire platform, operating at wavelengths between 4.3 and 4.6 μm. Total Q-factors of 151

High Q-factor multifunctional plasmonic metasurfaces in the mid-infrared
Nonlinear Kerr index n 2 in silicon.
One million quality factor integrated ring resonators in the mid-infrared

Germanium is a promising material for mid-infrared (MIR) integrated photonics due to its CMOS compatibility and wide transparency window covering the fingerprint spectral region (2–15 μm). However, due We demonstrate mid-infrared ring resonators fabricated in an The achieved a loaded Q In 0.53 Ga 0.47 As/InP materials platform operating at a wavelength of approximately 5.2 μ m with quality We report a high-Q ring resonator in the mid-infrared in a silicon-germanium on silicon chip-based platform. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the

We demonstrate a high-Q ring resonators in the mid-infrared in a silicon-germanium chip-based platform. The achieved a loaded Q-factor of 90,000 for the side-coupled ring around 4.18µm As application scenarios grow in complexity, multifunctional integrated metasurfaces germanium on silicon have been proposed as a potential development direction. We propose a We demonstrate a high-Q ring resonators in the mid-infrared in a silicon-germanium chip-based platform. The achieved a loaded Q-factor of 90,000 for the side-coupled ring around 4.18µm

Mid-infrared high-Q germanium microring resonator

Here the authors developed on-chip microresonators with a remarkable Q-factor of 38 million and demonstrated on-chip Brillouin lasing in the mid-infrared. These results We report Q factor of the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236 000 at the

Abstract We experimentally demonstrate an all-pass microring resonator (MRR) based on a Y 2 O 3 BOX germanium-on-insulator (GeOI) platform operating in the mid-IR region. The ring Advances in fabrication technology enable us to demonstrate such high Q-factors, which put sil-icon germanium at the forefront of mid-infrared integrated photonic platforms. We report ring resonators on a silicon germanium on silicon platform operating in the mid-infrared wavelength range around 3.5-4.6 µm with quality factors reaching up to one

Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics, high index contrast, small footprint, and low cost, as We report the realization of a silicon-germanium on silicon ring resonator with high Q-factor at mid-infrared wave- lengths. The fabricated ring exhibits a loaded Q-factor of 236,000 at the

The mid-infrared wavelength region (MIR, 3–15 μm) has a large potential for sensing applications, as many molecules have strong fundamental absorption lines in this range. However, the high

Crystalline Germanium High-Q Microresonators for Mid-IR

Multifunctional active mid-infrared ring resonators and directional couplers with quantum cascade laser cores allow electrical control of resonant frequency and quality factors,

We present a thermally tunable microring resonator (MRR) implemented on a Ge-on-insulator (Ge-OI) photonic platform tailored for mid-infrared spectrometer applications. Thanks to the favorable thermo-optic effect The mid-infrared wavelength region (MIR, 3–15 μm) has a large potential for sensing applications, as many molecules have strong fundamental absorption lines in this range. However, the high

In particular, we apply the technique to successfully integrate silicon micro-ring resonators on mid-infrared compatible substrates for operation in the mid-infrared3, 4, 5, 6, 7. Abstract Germanium is a promising material for mid-infrared (MIR) integrated photonics due to its CMOS compatibility and wide transparency window covering the fingerprint

We report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236 000 at the We report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236

The four-wave mixing (FWM) effect offers promise to generate or amplify light at wavelengths where achieving substantial gain is challenging, particularly within the mid-infrared (MIR) The mid-infrared wavelength region (MIR, 3–15 μm) has a large potential for sensing applications, as many molecules have strong fundamental absorption lines in this range. However, the high

We demonstrate a ring resonator with high Q-factor in the mid-infrared in a silicon- germanium on silicon chip-based platform. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the

Silicon-Germanium Ring Resonator On-Chip with High Q-factor in the Mid-Infrared Marko Perestjuk1,2, Rémi Armand2, Alberto Della Torre2, Milan Sinobad3, Arnan Mitchell1, Andreas

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